Dielectric Function of Nitride Semiconductors: Recent Experimental Results

Dielectric function of diluted magnetic semiconductors in the infrared regime

We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal ...

Nanosphere Lithography for Nitride Semiconductors

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Model dielectric function for 2D semiconductors including substrate screening

Dielectric screening of excitons in 2D semiconductors is known to be a highly non-local effect, which in reciprocal space translates to a strong dependence on momentum transfer q. We present an analytical model dielectric function, including the full non-linear q-dependency, which may be used as an alternative to more numerically taxing ab initio screening functions. By verifying the good agree...

Recent Theoretical and Experimental Results

We consider a wireless ad hoc network with single antenna nodes under a two-hop relay traffic pattern. Some of the nodes in the network form source/destination pairs, while the other nodes serve as amplify and forward relays. The relay gains are assigned such, that the interference between different source/destination links is nulled (multiuser zero forcing relaying; MU-ZFR). This essentially r...